PART |
Description |
Maker |
CY7C1231H-133AXI CY7C1231H-133AXC |
2-Mbit (128K x 18) Flow-Through SRAM with NoBLArchitecture 2-Mbit (128K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp.
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CY7C1345G-100AXC CY7C1345G-100AXI CY7C1345G-100BGC |
4-Mbit (128K x 36) Flow Through Sync SRAM
|
Cypress Semiconductor
|
CY7C1231H-133AXC CY7C1231H-133AXI |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
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IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85B |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器,单周期取 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8.5 ns, PQFP100 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PBGA119 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
CY7C1379B-117AC CY7C1379B-117BZC CY7C1379B |
9-Mbit (256K x 32) Flow-through SRAM with NoBL(TM) Architecture 9-Mbit (256K x 32) Flow-through SRAM with NoBL⑩ Architecture 9-Mbit (256K x 32) Flow-through SRAM with NoBL垄芒 Architecture 9-Mbit (256K x 32) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
IDT71V3577S75PFG IDT71V3577SA80PFGI IDT71V3577SA85 |
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3VI / O的流量,通过输出脉冲计数器,单周期取 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3V的I / O的流量,通过输出脉冲计数器,单周期取 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
IDT Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
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CY62137VNLL-70ZSXA CY62137VNLL-70ZSXE CY62137VNLL- |
2-Mbit (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PDSO44
|
Cypress Semiconductor Corp.
|
CY7C1019D-10VXI |
1-Mbit (128K x 8) Static RAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
CY62137V CY62137VLL-55ZI CY62137VLL-70ZE CY62137VL |
2-Mbit (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PDSO44
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1361C-133AXC CY7C1361C-133BGI CY7C1361C-133AJX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 9兆位56 × 36/512K × 18)流通过的SRAM 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY14B101LA-SP45XI CY14B101LA-SP45XIT CY14B101LA-BA |
1 Mbit (128K x 8/64K x 16) nvSRAM; Organization: 128Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 1 Mb; Package: SSOP 128K X 8 NON-VOLATILE SRAM, 45 ns, PDSO48
|
Cypress Semiconductor, Corp.
|